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AMMC-6408 6-18 GHz 1W Power Amplifier
Junction operating temperature will directly affect the device MTTF. Typical IM3 level vs. Frequency range 6 to 18 GHz?
A mamc measured detector voltage versus output power at 18GHz is shown Figure Minor improvements in performance are possible depending on the application. Typical IM3 level and Ids vs. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies 9.
An optional output power detector network is also provided. Vofs can be measured at a single reference temperature.
The bonding diagram for the recommended assembly is shown in Figure Data subject to change. A single DC gate supply connected to Vg will bias all gain stages.
Typical S22 over temperature Figure These ratings apply to each individual FET 5. This method gives an error due to temperature drift of less than 0.
This method gives an error close to the method 1. Typical ESD diode current versus diode voltage for connected diodes in series is shown in Figure Broadband Wireless Access including The drain bias voltage range is 3 to 5V. Observe Precautions for handling electrostatic sensitive devices. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
AMMC GHz 1W Power Amplifier |
In a finalized package form, Vd1 and Vd2 terminals are commonly connected to the Vdd terminal. Electro Discharge Damage and Control. Small signal Gain of 18dB?
Negative supply is used for the DC gate biasing. This data represents package part performances, and does not contain test fixture losses. Input port partially matched For narrowband applications, customer may obtain optimum matching and gain with an additional matching circuit? There are three methods to calculate Vofs: Wide Frequency Range GHz? Vofs can either be characterized over temperature and stored akmc a lookup table, or it can be measured at two temperatures and a linear fit used to calculate Vofs at any temperature.
The drift error will be less than 0. Muting can be accomplished by setting Vgg to the pinch-off voltage Vp.
Operation in excess of any one of these conditions may result in permanent damage to this device.
AMMC-6408 Datasheet PDF
Integrated RF power detector? No ground wires are needed since ground connections are made with plated through-holes to the backside of the device.
Typical ESD diode current versus diode voltage for connected diodes in series Figure Typical S11 over temperature Figure Typical Gain and Reverse Isolation Figure 2.
For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. Vofs can be measured before each detector measurement ajmc removing or switching off the power source and measuring Vref – Vdet.